Published March 1983
| Version v1
Report
An optimized Si-detector of X-rays from nanosecond laser plasma
Creators
- 1. Ceske Vysoke Uceni Technicke, Prague (Czechoslovakia). Fakulta Jaderna a Fysikalne Inzenyrska
Description
The spectral and time characteristics must be improved of X-ray detectors to meet the high demands placed on them in laser plasma experiments. A special optimized Si PIN diode was developed and tested. It exhibits time constants better than 0.5 ns and good spectral responsivity in the entire 200 eV - 10 keV energy range. The results are presented of electron temperature measurements performed in a laser-produced CH plasma by the two-foil absorption technique to demonstrate detector capability. (J.U.)
Additional details
Publishing Information
- Imprint Title
- 12th Czechoslovak seminar on plasma physics and technology
- Imprint Pagination
- 271 p.
- Journal Page Range
- p. 250-253.
- Report number
- IPPCZ--249
Conference
- Title
- 12. Czechoslovak seminar on plasma physics and technology.
- Dates
- 21-25 Mar 1983.
- Place
- Liblice (Czechoslovakia).
INIS
- Country of Publication
- Serbia and Montenegro
- Country of Input or Organization
- Serbia and Montenegro
- INIS RN
- 15057486
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRON TEMPERATURE; LASER-PRODUCED PLASMA; OPTIMIZATION; SENSITIVITY; SILICON DIODES; SOFT X RADIATION; X-RAY DETECTION
- Descriptors DEC
- DETECTION; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; PLASMA; RADIATION DETECTION; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; X RADIATION