Published 1990
| Version v1
Journal article
Luminescence of Bi4Ge3O12 (BGO) crystals under KrF and XeF laser excitation
Description
Results of the BGO luminescence investigation at a low excitation intensity by the KrF laser and a two-photon excitation by the XeF laser confirm that the main emission band is due to optical transitions in local Bi3 ions. Under an intense KrF laser excitation a broad structureless emission is observed. This emission may be assigned to the intraband optical transitions of highly electrons in the conduction band
Additional details
Additional titles
- Original title (Russian)
- Излучение Би
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk Latvijskoj SSR, Seriya Fizicheskikh i Tekhnicheskikh Nauk
- Journal Issue
- no.5
- Series
- Izv. Akad. Nauk Latv. SSR, Ser. Fiz. Tekh. Nauk.
- ISSN
- 0321-1673
- CODEN
- IALFA
INIS
- Country of Publication
- Latvia
- Country of Input or Organization
- USSR
- INIS RN
- 23006666
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BISMUTH COMPOUNDS; BISMUTH IONS; ENERGY-LEVEL TRANSITIONS; GERMANATES; LASER RADIATION; LOW TEMPERATURE; LUMINESCENCE; MEDIUM TEMPERATURE; MONOCRYSTALS; TEMPERATURE DEPENDENCE; VISIBLE RADIATION
- Descriptors DEC
- CHARGED PARTICLES; CRYSTALS; ELECTROMAGNETIC RADIATION; EMISSION; GERMANIUM COMPOUNDS; IONS; OXYGEN COMPOUNDS; PHOTON EMISSION; RADIATIONS