Published December 1, 2011 | Version v1
Journal article

Spin coated graphene films as the transparent electrode in organic photovoltaic devices

  • 1. Electrical Engineering Department and Center of Advanced Materials and Photonics, Technological Educational Institute (TEI) of Crete, P.B 1939, Heraklion, Crete (Greece)
  • 2. Materials Science and Technology Department, University of Crete, Heraklion 710 03 (Greece)
  • 3. Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH), Heraklion, Crete (Greece)

Description

Many research efforts have been devoted to the replacement of the traditional indium–tin-oxide (ITO) electrode in organic photovoltaics. Solution-based graphene has been identified as a potential replacement, since it has less than two percent absorption per layer, relative high carrier mobility, and it offers the possibility of deposition on large area and flexible substrates, compatible with roll to roll manufacturing methods. In this work, soluble reduced graphene films with high electrical conductivity and transparency were fabricated and incorporated in poly(3-hexylthiophene) [6,6]-phenyl-C61-butyric acid methyl ester photovoltaic devices, as the transparent electrode. The graphene films were spin coated on glass from an aqueous dispersion of functionalized graphene, followed by a reduction process combining hydrazine vapor and annealing under argon, in order to reduce the sheet resistance. The photovoltaic devices obtained from the graphene films showed lower performance than the reference devices with ITO, due to the higher sheet resistance (2 kΩ/sq) and the poor hydrophilicity of the spin coated graphene films.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2011.04.208

Additional details

Identifiers

DOI
10.1016/j.tsf.2011.04.208;
PII
S0040-6090(11)01055-8;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
520
Journal Issue
4
Journal Page Range
p. 1238-1241
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
3. international symposium on transparent conductive materials
Acronym
TCM 2010
Dates
17-21 Oct 2010
Place
Hersonissos, Crete (Greece)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43108562
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ABSORPTION; ARGON; DEPOSITION; FILMS; GLASS; LAYERS; MANUFACTURING; PHOTOVOLTAIC EFFECT; POLYMERS; SUBSTRATES; TIN OXIDES
Descriptors DEC
CHALCOGENIDES; ELEMENTS; FLUIDS; GASES; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC EFFECT; RARE GASES; SORPTION; TIN COMPOUNDS

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.