Characteristics of organic-inorganic hybrid plasma polymer thin films for low-κ ILD applications
Creators
- 1. Department of Chemistry and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
Description
This study investigated the effects of plasma power and tetraethylorthosilane (TEOS) to cyclohexene ratios on low-κ organic-inorganic hybrid plasma polymer thin films deposited on silicon (100) substrates. These films were deposited using a plasma enhanced chemical vapor deposition (PECVD) method, in addition to the electrical and mechanical properties of the resulting composites. Cyclohexene and TEOS were used as organic and inorganic precursors, respectively, with hydrogen and argon as precursor bubbler gases. Furthermore, additional argon was used as a carrier gas. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared (FT-IR) spectroscopy, atomic force microscopy (AFM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). The ellipsometry results showed the thickness of the hybrid thin film, and the FT-IR spectra showed that the hybrid polymer thin films were completely fragmented and polymerized between cyclohexene and TEOS. AFM results showed that polymer films with a smooth surface could be grown under various deposition conditions, while TEM and XRD showed that the hybrid thin film was an amorphous plasma polymer thin film without porosity. In addition, current-voltage (C-V) curves were prepared to calculate the dielectric constants. Post-annealing was applied to investigate the thermal stability of hybrid plasma polymer thin films in the hardness, Young's modulus, thermal shrinkage, and the dielectric constant at 400 oC.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2010.04.053Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2010.04.053;
- PII
- S0040-6090(10)00585-7;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 518
- Journal Issue
- 22
- Journal Page Range
- p. 6417-6421
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 2. international conference on microelectronics and plasma technology
- Acronym
- ICMAP 2009
- Dates
- 22-25 Sep 2009
- Place
- Busan (Korea, Republic of)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42060087
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ARGON; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; HARDNESS; HYDROGEN; INFRARED SPECTRA; PERMITTIVITY; PLASMA; POLYMERS; POROSITY; PRECURSOR; SILICON; STABILITY; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; YOUNG MODULUS
- Descriptors DEC
- CHEMICAL COATING; COHERENT SCATTERING; DEPOSITION; DIELECTRIC PROPERTIES; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELEMENTS; FILMS; FLUIDS; GASES; HEAT TREATMENTS; MEASURING METHODS; MECHANICAL PROPERTIES; MICROSCOPY; NONMETALS; PHYSICAL PROPERTIES; RARE GASES; SCATTERING; SEMIMETALS; SPECTRA; SURFACE COATING; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.