Published September 1, 2010 | Version v1
Journal article

Characteristics of organic-inorganic hybrid plasma polymer thin films for low-κ ILD applications

  • 1. Department of Chemistry and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

Description

This study investigated the effects of plasma power and tetraethylorthosilane (TEOS) to cyclohexene ratios on low-κ organic-inorganic hybrid plasma polymer thin films deposited on silicon (100) substrates. These films were deposited using a plasma enhanced chemical vapor deposition (PECVD) method, in addition to the electrical and mechanical properties of the resulting composites. Cyclohexene and TEOS were used as organic and inorganic precursors, respectively, with hydrogen and argon as precursor bubbler gases. Furthermore, additional argon was used as a carrier gas. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared (FT-IR) spectroscopy, atomic force microscopy (AFM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). The ellipsometry results showed the thickness of the hybrid thin film, and the FT-IR spectra showed that the hybrid polymer thin films were completely fragmented and polymerized between cyclohexene and TEOS. AFM results showed that polymer films with a smooth surface could be grown under various deposition conditions, while TEM and XRD showed that the hybrid thin film was an amorphous plasma polymer thin film without porosity. In addition, current-voltage (C-V) curves were prepared to calculate the dielectric constants. Post-annealing was applied to investigate the thermal stability of hybrid plasma polymer thin films in the hardness, Young's modulus, thermal shrinkage, and the dielectric constant at 400 oC.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2010.04.053

Additional details

Identifiers

DOI
10.1016/j.tsf.2010.04.053;
PII
S0040-6090(10)00585-7;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
518
Journal Issue
22
Journal Page Range
p. 6417-6421
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
2. international conference on microelectronics and plasma technology
Acronym
ICMAP 2009
Dates
22-25 Sep 2009
Place
Busan (Korea, Republic of)

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.