Published September 2013
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Dielectric losses of silicon diodes irradiated with 700 MeV-bismuth ions and 170 MeV-xenon ions
Creators
- 1. Belarusian state university, Minsk (Belarus)
- 2. JSC 'Iintegral', Minsk (Belarus)
- 3. Joint institute for nuclear research, Dubna (Russian Federation)
- 4. Ruhr-universitaet Bochum, Bochum (Germany)
Description
Silicon diodes with p+n-junction irradiated with 700 MeV-bismuth ions and 170 MeV-xenon ions are examined. Irradiation fluence was 108 cm-2. It is shown that the dependences of the loss tangent tanδ on the reverse voltage Ux allow to distinguish loss tangent contributions from defects located at different depth. Obtained dependences of tanδ on the frequency f of alternate current for diodes subjected to the double implantation show cumulative formation of defects in the space charge region as well as phased formation of continuous irradiation damaged layer. (authors)
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Additional details
Additional titles
- Original title (Russian)
- Диэлектрические потери кремниевых диодов, облученных ионами висмута с энергией 700 мэв и ксенона с энергией 170 мэв
Publishing Information
- Imprint Place
- Minsk (Belarus)
- ISBN
- 978-985-553-141-9
- Imprint Title
- Interaction of radiation with solids. Proceedings of the 10th international conference
- Imprint Pagination
- 384 p.
- Journal Page Range
- p. 146-148
- Report number
- INIS-BY--099
Conference
- Title
- 10. International conference 'Interaction of radiation with solids'
- Original Conference Title
- 10. Mezhdunarodnaya konferentsiya 'Vzaimodejstvie izluchenij s tverdym telom'
- Dates
- 24-27 Sep 2013
- Place
- Minsk (Belarus)
INIS
- Country of Publication
- Belarus
- Country of Input or Organization
- Belarus
- INIS RN
- 46131570
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BISMUTH IONS; ION IMPLANTATION; MEV RANGE 100-1000; PHYSICAL RADIATION EFFECTS; SILICON; SILICON DIODES; XENON IONS
- Descriptors DEC
- CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; IONS; MEV RANGE; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS
Optional Information
- Notes
- 6 refs., 4 fig. Imprint:Vzaimodejstvie izluchenij s tverdym telom. Materialy 10 Mezhdunarodnoj konferentsii