Raman-active Froehlich optical phonon mode in arsenic implanted ZnO
- 1. Institute of Microelectronics, A STAR Agency for Science, Technology and Research, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore)
- 2. Institute of Materials Research and Engineering, A STAR Agency for Science, Technology and Research, 3 Research Link, Singapore 117602 (Singapore)
- 3. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore and Data Storage Institute, 5 Engineering Drive 1, Singapore 117608 (Singapore)
Description
In this letter, using both off-resonant and resonant Raman spectroscopic techniques, the correlation of optical phonons and structural disorder in As+ implanted ZnO single crystals has been investigated. An additional broad peak shoulder at 550 cm-1 between the transverse optical and longitudinal optical (LO) phonons was clarified to be resonant Froehlich optical phonon mode in the framework of effective dielectric function. Under resonance condition, an asymmetric broadening and softening of the LO phonon along with a blueshifted luminescent peak revealed the decreasing phonon coherent length and nanocrystallization with increasing fluence, respectively, in good agreement with the observations of transmission electron microscopy and atomic force microscopy
Additional details
Identifiers
- DOI
- 10.1063/1.3067997;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 94
- Journal Issue
- 1
- Journal Page Range
- p. 011913-011913.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40051232
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ARSENIC; ATOMIC FORCE MICROSCOPY; COHERENCE LENGTH; CRYSTALLIZATION; DIELECTRIC MATERIALS; ENERGY GAP; ION IMPLANTATION; LINE BROADENING; MONOCRYSTALS; PHONONS; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; POROSITY; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; DIMENSIONS; ELECTRON MICROSCOPY; ELEMENTS; EMISSION; LENGTH; LUMINESCENCE; MATERIALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHOTON EMISSION; POINT DEFECTS; QUASI PARTICLES; RADIATION EFFECTS; SEMIMETALS; SPECTRA; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2009 American Institute of Physics