Published September 15, 2010
| Version v1
Journal article
Giant low frequency dielectric tunability in high-k Ba(Fe1/2Nb1/2)O3 ceramics at room temperature
Creators
- 1. Department of Applied Physics and Materials Research Center, Hong Kong Polytechnic University, Hung Hom, Kowloon (Hong Kong)
Description
The effect of electric field on the dielectric properties of high-k Ba(Fe1/2Nb1/2)O3 ceramics with different grain sizes is reported. A low frequency giant dielectric tunability (>85%) can be obtained under a bias field as low as 50 V/mm. The results suggest that the giant dielectric tunability originates from extrinsic contributions such as domain boundary and oxygen defect relaxations. These findings provide a clear understanding to the complicated dielectric response in a family of high-k ceramics and a key to the high tunability of nonferroelectrics under low electric fields, which is attractive for potential applications in tunable devices.
Additional details
Identifiers
- DOI
- 10.1063/1.3487472;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 108
- Journal Issue
- 6
- Journal Page Range
- p. 064104-064104.6
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42069910
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BARIUM COMPOUNDS; CERAMICS; CRYSTAL DEFECTS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; ELECTRIC FIELDS; GRAIN BOUNDARIES; GRAIN SIZE; IRON OXIDES; NIOBIUM OXIDES; OXYGEN; RELAXATION; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; IRON COMPOUNDS; MATERIALS; MICROSTRUCTURE; NIOBIUM COMPOUNDS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SIZE; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2010 American Institute of Physics