Published October 1982 | Version v1
Journal article

Ion implantation effects in glasses

Creators

  • 1. Sandia National Labs., Albuquerque, NM (USA)

Description

Ion implantation can be used to introduce network damage and to alter the chemical composition in glasses. Structural changes can be inferred from IR measurements near 1000 cm-1 and by optical absorption near 2150 A. Implantation-induced damage decreases the implanted volume in fused silica with consequent changes in the refractive index, the near-surface hardness, and the tensile surface stress. Prior work in these areas is reviewed. Implantation into alkali silicate glasses depletes the alkali content in the implanted region. These changes allow preferential surface crystallization in Li2O.2SiO2 glasses. Crystallization of amorphous SiO2 can be induced by implantation of Li. Insight into the crystallization process is obtained by following the associated ion movement by elastic recoil detection and optical techniques. Implantation of 20 keV H shows that saturation of implanted H-sites in fused silica occurs at about 2.2 x 1021 H/cm3 in agreement with free volume estimates of the maximum number of available interstitial sites. Details of H and D interactions in fused silica were studied as a function of fluence and temperature. Results are of interest in studies of corrosion in glasses considered for nuclear waste encapsulation and for components in fusion reactors. (author)

Additional details

Publishing Information

Journal Title
Radiat. Eff.
Journal Volume
65
Journal Issue
1-4
Series
Radiat. Eff.
Journal Page Range
17-30
ISSN
0033-7579

Conference

Title
1. international conference on radiation effects in insulators.
Dates
1981.
Place
Arco, Lago di Garda (Italy).

Optional Information

Contract/Grant/Project number
Contract DE-ACO4-76-DP00789