Metal patterning using maskless vacuum evaporation process based on selective deposition of photochromic diarylethene

We developed an electrode/wiring patterning method that does not employ evaporation shadow masks; this method is based on selective metal deposition of photochromic diarylethene (DAE). In the selective Mg deposition based on the photoisomerization of DAE, Mg vapor atoms are deposited only on colored DAE film obtained upon UV irradiation, but not on uncolored film. We demonstrated fine metal Mg patterning with a minimum width of 3 μm and the preparation of a patterned cathode. The selective metal deposition method has significant potential for preparing fine electrodes/wiring for various organic electronic devices