Intense pulsed light annealing of copper zinc tin sulfide nanocrystal coatings
Creators
- 1. Department of Chemical Engineering and Materials Science, University of Minnesota, 151 Amundson Hall, 421 Washington Avenue SE, Minneapolis, Minnesota 55455 (United States)
Description
A promising method for forming the absorber layer in copper zinc tin sulfide [Cu2ZnSnS4 (CZTS)] thin film solar cells is thermal annealing of coatings cast from dispersions of CZTS nanocrystals. Intense pulsed light (IPL) annealing utilizing xenon flash lamps is a potential high-throughput, low-cost, roll-to-roll manufacturing compatible alternative to thermal annealing in conventional furnaces. The authors studied the effects of flash energy density (3.9–11.6 J/cm2) and number of flashes (1–400) during IPL annealing on the microstructure of CZTS nanocrystal coatings cast on molybdenum-coated soda lime glass substrates (Mo-coated SLG). The annealed coatings exhibited cracks with two distinct linear crack densities, 0.01 and 0.2 μm−1, depending on the flash intensity and total number of flashes. Low density cracking (0.01 μm−1, ∼1 crack per 100 μm) is caused by decomposition of CZTS at the Mo-coating interface. Vapor decomposition products at the interface cause blisters as they escape the coating. Residual decomposition products within the blisters were imaged using confocal Raman spectroscopy. In support of this hypothesis, replacing the Mo-coated SLG substrate with quartz eliminated blistering and low-density cracking. High density cracking is caused by rapid thermal expansion and contraction of the coating constricted on the substrate as it is heated and cooled during IPL annealing. Finite element modeling showed that CZTS coatings on low thermal diffusivity materials (i.e., SLG) underwent significant differential heating with respect to the substrate with rapid rises and falls of the coating temperature as the flash is turned on and off, possibly causing a build-up of tensile stress within the coating prompting cracking. Use of a high thermal diffusivity substrate, such as a molybdenum foil (Mo foil), reduces this differential heating and eliminates the high-density cracking. IPL annealing in presence of sulfur vapor prevented both low- and high-density cracking as well as blistering. However, grain growth was limited even after annealing with 400 flashes. This lack of grain growth is attributed to a difficulty of maintaining high sulfur vapor pressure and absence of alkali metal impurities when Mo foil substrates are used.
Additional details
Identifiers
- DOI
- 10.1116/1.4961661;
Publishing Information
- Journal Title
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
- Journal Volume
- 34
- Journal Issue
- 5
- Journal Page Range
- p. 051204-051204.13
- ISSN
- 0734-2101
- CODEN
- JVTAD6
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48037390
- Subject category
- S36: MATERIALS SCIENCE; S42: ENGINEERING;
- Descriptors DEI
- ANNEALING; BLISTERS; CDZNTE SEMICONDUCTOR DETECTORS; COATINGS; COPPER; CRACKING; DENSITY; FINITE ELEMENT METHOD; MOLYBDENUM; NANOSTRUCTURES; RAMAN SPECTROSCOPY; SOLAR CELLS; SUBSTRATES; SULFUR; THERMAL DIFFUSIVITY; TIN SULFIDES; VAPOR PRESSURE; XENON; ZINC SULFIDES
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; CHEMICAL REACTIONS; DECOMPOSITION; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; FLUIDS; GASES; HEAT TREATMENTS; INORGANIC PHOSPHORS; LASER SPECTROSCOPY; MATHEMATICAL SOLUTIONS; MEASURING INSTRUMENTS; METALS; NONMETALS; NUMERICAL SOLUTION; PHOSPHORS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; PYROLYSIS; RADIATION DETECTORS; RARE GASES; REFRACTORY METALS; SEMICONDUCTOR DETECTORS; SOLAR EQUIPMENT; SPECTROSCOPY; SULFIDES; SULFUR COMPOUNDS; THERMOCHEMICAL PROCESSES; THERMODYNAMIC PROPERTIES; TIN COMPOUNDS; TRANSITION ELEMENTS; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2016 American Vacuum Society