Published December 26, 2007 | Version v1
Journal article

Implementation of a Hadamard Gate Using Laser Light on a Phosphorus Doped Si Device

  • 1. Research Academic Computer Technology Institute, Patras (Greece)
  • 2. Computer Engineering and Informatics Department, University of Patras, Patras (Greece)
  • 3. Department of Information and Communication Systems Engineering, University of the Aegean, Karlovassi, Samos (Greece)

Description

The dynamics of a single qubit, encoded in the charge states of a singly ionized phosphorus atom embedded in silicon bulk material are studied. For the simulation of the system a suitably modified version of the MATLAB package SCHRODINGER was used. Preliminary results were in agreement with previously published work regarding single qubit rotations. For the Hadamard Gate, the duration of the pulse T was computed as a function of input parameters the results produced outputs of the order of 9x10-10 sec

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
963
Journal Issue
2
Journal Page Range
p. 785-787
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
International conference on computational methods in science and engineering
Acronym
ICCMSE 2007
Dates
25-30 Sep 2007
Place
Corfu (Greece)

Optional Information

Notes
(c) 2007 American Institute of Physics