The dependence of the resistivity of semiconducting diamond on radiation damage and annealing

A semiconducting diamond was irradiated at ambient temperature with 1 mev electrons. The dependence of the resistivity on the dose is consistent with annealing of the radiation damage during the course of the irradiation. The resistivity was then measured as a function of isochronal annealing in the range 200 to 1400 degrees C. The results suggest the presence of a number of annealing mechanisms. At 1400 degrees C the recovery was complete. The same specimen was then irradiated with 1 mev electrons at 77k. The variation of the resistivity with the dose was consistent with diamond being a partially compensated p-type semiconductor. The resistivity as a function of isochronal annealing in the range 100 to 1450 degrees C once again indicated the presence of a number of distinct processes.