Published January 3, 2005
| Version v1
Journal article
Indium oxide as a possible tunnel barrier in spintronic devices
- 1. Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, P.O. Box 1527, Vassilika Vouton, 711 10 Heraklion, Crete (Greece)
- 2. Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, P.O. Box 1527, Vassilika Vouton, 711 10 Heraklion, Crete (Greece) and Department of Materials Science and Technology, University of Crete, P.O. Box 2208, 710 03 Heraklion, Crete (Greece)
- 3. Department of Physics, University of Crete, P.O. Box 2208, 710 03 Heraklion, Crete (Greece)
Description
We report the growth of ultra-thin indium oxide layers using the dc-magnetron sputtering method. We demonstrate that good quality tunnel barriers made of indium oxide can be routinely fabricated and employed in spintronic-related devices. Simple magnetic tunnel junctions (MTJs) were fabricated in a cross geometry using ex situ thermally evaporated cobalt and permalloy. Our best junctions obey the Rowell criteria for tunneling and exhibit a tunnel magnetoresistance of 15% at 100 K
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2004.06.162;
- PII
- S0040-6090(04)00975-7;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 471
- Journal Issue
- 1-2
- Journal Page Range
- p. 293-297
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36109928
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COBALT; INDIUM OXIDES; LAYERS; MAGNETORESISTANCE; MAGNETRONS; PERMALLOY; SPUTTERING; TUNNEL EFFECT
- Descriptors DEC
- ALLOYS; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; INDIUM COMPOUNDS; IRON ALLOYS; METALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NICKEL ALLOYS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.