Published May 2010 | Version v1
Miscellaneous Open

The thermal instability of current-voltage characteristic of n/Si - p/Calm structure, received by chemical gas-vapor deposition method

  • 1. AS RU, Physical-technical institute, SPA 'Physics-Sun', Tashkent (Uzbekistan)

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Part of:
Proceedings of II republic scientific conference 'Actual problems of modern physics and astronomy'

Additional details

Additional titles

Original title (Russian)
Тепловые неустойчивости вольтамперной характеристики н/Си - п/C

Publishing Information

Publisher
Karshi davlat universiteti
Imprint Place
Karshi (Uzbekistan)
Imprint Title
Proceedings of II republic scientific conference 'Actual problems of modern physics and astronomy'
Imprint Pagination
[235 p.]
Journal Page Range
3 p.
Report number
INIS-UZ--169

Conference

Title
2. republic scientific conference on actual problems of modern physics and astronomy
Original Conference Title
II respublikanskaya nauchnaya konferentsiya 'Aktual'nye problemy sovremennoj fiziki i astronomii'
Dates
21 May 2010
Place
Karshi (Uzbekistan)

Optional Information

Notes
refs. 5, fig. 1 Imprint:Materialy II respublikanskoj nauchnoj konferentsii 'Aktual'nye problemy sovremennoj fiziki i astronomii'