Published May 2010
| Version v1
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The thermal instability of current-voltage characteristic of n/Si - p/Calm structure, received by chemical gas-vapor deposition method
Creators
- 1. AS RU, Physical-technical institute, SPA 'Physics-Sun', Tashkent (Uzbekistan)
Description
no abstract available
Files
41086891.pdf
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Additional details
Additional titles
- Original title (Russian)
- Тепловые неустойчивости вольтамперной характеристики н/Си - п/C
Publishing Information
- Publisher
- Karshi davlat universiteti
- Imprint Place
- Karshi (Uzbekistan)
- Imprint Title
- Proceedings of II republic scientific conference 'Actual problems of modern physics and astronomy'
- Imprint Pagination
- [235 p.]
- Journal Page Range
- 3 p.
- Report number
- INIS-UZ--169
Conference
- Title
- 2. republic scientific conference on actual problems of modern physics and astronomy
- Original Conference Title
- II respublikanskaya nauchnaya konferentsiya 'Aktual'nye problemy sovremennoj fiziki i astronomii'
- Dates
- 21 May 2010
- Place
- Karshi (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 41086891
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; DIAMONDS; ELECTRIC CONDUCTIVITY; ELECTRON MICROSCOPES; RAMAN SPECTRA; SCANNING ELECTRON MICROSCOPY; SILICON; STABILIZATION; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS
- Descriptors DEC
- CARBON; CHEMICAL COATING; DEPOSITION; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELEMENTS; FILMS; MICROSCOPES; MICROSCOPY; MINERALS; NONMETALS; PHYSICAL PROPERTIES; SEMIMETALS; SPECTRA; SURFACE COATING; TEMPERATURE RANGE
Optional Information
- Notes
- refs. 5, fig. 1 Imprint:Materialy II respublikanskoj nauchnoj konferentsii 'Aktual'nye problemy sovremennoj fiziki i astronomii'