Published July 2014 | Version v1
Journal article Metadata-only

Peculiarities of Bi doping of Ge-Sb-Te thin films for PCM devices

Creators

  • 1. Russian Academy of Sciences, Kurnakov Inst. of General and Inorganic Chemistry, RAS, Moscow (Russian Federation)
  • 2. National Research Univ. MIET, Moscow (Russian Federation)
  • 3. Kurnakov Inst. of General and Inorganic Chemistry, RAS, Moscow (Russian Federation)
  • 4. Al Farabi Kazakh National Univ., Science Research Inst. of Experimental and Theoretical Physics, Almaty (Kazakhstan)

Description

The influence of Bi doping on the thermal, electrical, and optical properties of Ge2Sb2Te5 thin films was investigated. The existence of two Bi concentration ranges with different influence of dopant on the properties of thin films was established. At low concentrations (0.5-1.0 wt.% of Bi), anomalous deviations of physical properties from monotonous concentration dependences were observed. This effect is explained by the use of percolation theory, where formation of infinite clusters is accompanied by critical phenomena at critical concentrations. (author)

Availability note (English)

Available from doi: https://doi.org/10.1139/cjp-2013-0607

Additional details

Identifiers

DOI
10.1139/cjp-2013-0607;

Publishing Information

Journal Title
Canadian Journal of Physics
Journal Volume
92
Journal Issue
7-8
Journal Page Range
p. 684-689
ISSN
0008-4204

INIS

Country of Publication
Canada
Country of Input or Organization
Canada
INIS RN
50022973
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BISMUTH; CRYSTAL DOPING; ELECTRICAL PROPERTIES; OPTICAL PROPERTIES; PHASE TRANSFORMATIONS; THERMODYNAMIC PROPERTIES; THIN FILMS
Descriptors DEC
ELEMENTS; FILMS; METALS; PHYSICAL PROPERTIES

Optional Information

Notes
24 refs., 5 tabs., 9 figs.