28 nm Integrated Circuit for PIXel detector
- 1. Physics Department and INFN Milano Bicocca, University of Milano Bicocca, Piazza della Scienza 3, Milano, 20126 (Italy)
Description
IC-PIX28 (Integrated Circuit for PIXel detectors) is an analog read-out front-end fabricated in 28 nm Bulk-CMOS technology to process the charge signal produced by the pixel detector having 100 fF parasitic capacitance. The device is composed by a Charge Sensitive Pre-amplifier (CSPreamp) and a comparator. The development of IC-PIX28 manages several issues due to the poor analog performance of the standard-process MOS transistors in 28 nm Bulk-CMOS technology, whose choice is motivated by the expected rad-hard performance up to 1 Grad of Total Ionizing Dose. IC-PIX28 achieves performance robustness and low-power consumption by specific circuital solutions and it operates from a single 900 mV supply voltage. The full IC-PIX28 read-out channel consumes 4.3 W. The CSPreamp performs 35 mV/fC sensitivity, 40 dB Signal-to-Noise Ratio, and 0.033 fC (204 e) Equivalent Noise Charge. Moreover, a switched-capacitors inverter-based comparator performs the Time-over-Threshold (ToT, at very low power consumption) with a measured ToT range of 500 ns convertible in a digital word with a high bit resolution (> 14).
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nima.2018.05.012Additional details
Identifiers
- DOI
- 10.1016/j.nima.2018.05.012;
- PII
- S0168900218305977;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 904
- Journal Page Range
- p. 140-148
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53039539
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- AMPLIFIERS; CAPACITANCE; CAPACITORS; ELECTRIC POTENTIAL; INTEGRATED CIRCUITS; INVERTERS; MOS TRANSISTORS; PERFORMANCE; RADIATION DOSE UNITS; READOUT SYSTEMS; RESOLUTION; SENSITIVITY; SIGNALS; SIGNAL-TO-NOISE RATIO; SWITCHES
- Descriptors DEC
- DIMENSIONLESS NUMBERS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; EQUIPMENT; MICROELECTRONIC CIRCUITS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; TRANSISTORS; UNITS
Optional Information
- Copyright
- Copyright (c) 2018 Elsevier B.V. All rights reserved.