Published October 2012 | Version v1
Miscellaneous

Optical properties of GaAS/CaF2 nanofilms with variable thickness

  • 1. Tashkent State Technical University, Tashkent (Uzbekistan)

Description

Full text: The escape depths of the secondary and photo electron emissions from GaAs nanofilms with different thickness deposited by MBE on CaF2(100) surface have been determined. It was observed that the escape depth of a true secondary and photo electrons of GaAs/CaF2(110) nanofilm systems is 70 - 80 A. The optical properties of these films have been investigated. It was found that the optical properties of GaAs film (at hν ≥ 1.3 eV) in the range of d = 0 - 400 A strongly depend on thickness of a film. (authors)

Part of:
Program and Abstracts of the Advanced Research Workshop on Recent Trends and Prospects for Renewable Energy: From Low-Dimensional Functional Materials to Innovation Management

Additional details

Publishing Information

Publisher
Turin Polytechnic University in Tashkent
Imprint Place
Tashkent (Uzbekistan)
Imprint Title
Program and Abstracts of the Advanced Research Workshop on Recent Trends and Prospects for Renewable Energy: From Low-Dimensional Functional Materials to Innovation Management
Imprint Pagination
23 p.
Journal Page Range
p. 14
Report number
INIS-UZ--177

Conference

Title
From Low-Dimensional Functional Materials to Innovation Management
Acronym
Advanced Research Workshop on Recent Trends and Prospects for Renewable Energy
Dates
2-3 Oct 2012
Place
Tashkent (Uzbekistan)

Optional Information