Structural characterisation of Ti:sapphire regions formed by localised high-energy implantation of Ti and O ions

We have investigated the possibility of forming Ti:sapphire by co-implanting c-axis-oriented Al2O3 wafers with Ti and O ions and have identified the implantation and annealing conditions which lead to optimisation of the concentration of Ti ions stabilised in the optically active 3+ oxidation state required for laser action. We believe that this implantation approach may provide a pathway for the formation of a Ti:Al2O3 laser in a waveguide geometry. As part of this investigation, we have performed microbeam analysis of patterned Ti/O-doped waveguide regions formed by implantation through a mask and have observed the lateral distribution of Ti in as-implanted and annealed samples using Rutherford backscattering spectrometry (RBS) and particle-induced X-ray emission (PIXE). The profiles are found to be consistent with expectations and in agreement with complementary information gleaned from cathodoluminescence (CL), surface profilometry and optical microscopy studies