Published February 1974 | Version v1
Journal article Metadata-only

Electrical characteristics of MIS-structures with reactive sputtered silicon nitride

Creators

  • 1. Moskovskij Inzhenerno-Fizicheskij Inst. (USSR)

Description

no abstract available

Additional details

Additional titles

Original title (Russian)
Электрические характеристики MDP-структур с нитридом кремния, получаемым реактивным катодным распылением
Augmented title (English)
MIS-metal-dielectric-semiconductor structures

Publishing Information

Journal Title
Izv. Vyssh. Ucheb. Zaved., Fiz.
Journal Issue
no.2(141
Series
Izv. Vyssh. Ucheb. Zaved., Fiz.

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
5131359
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CATHODE SPUTTERING; CRYSTAL GROWTH; DATA; ELECTRIC CHARGES; ELECTRIC CONDUCTIVITY; MIS TRANSISTORS; PLASMA; SILICON NITRIDES; SURFACE CLEANING; TEMPERATURE DEPENDENCE
Descriptors DEC
CLEANING; ELECTRICAL PROPERTIES; INFORMATION; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; SPUTTERING; SURFACE FINISHING; TRANSISTORS

Optional Information

Notes
For English translation see the journal Sov. Phys. J.