Published 1996
| Version v1
Miscellaneous
Deep states in GaAs/AlGaAs GRIN SCH laser structures grown by molecular beam epitaxy
- 1. Institute of Electron Technology, Warsaw (Poland)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of 1. Polish - Korean Symposium on Materials Science
- Imprint Pagination
- 81 p.
- Journal Page Range
- p. 30
Conference
- Title
- 1. Polish - Korean Symposium on Materials Science
- Dates
- 16-20 Dec 1996
- Place
- Warsaw (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 30025350
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ALUMINIUM ARSENIDES; CRYSTAL STRUCTURE; ENERGY LEVELS; GALLIUM ARSENIDES; HETEROJUNCTIONS; INTERFACES; MEETINGS; MOLECULAR BEAM EPITAXY
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EPITAXY; GALLIUM COMPOUNDS; PNICTIDES; SEMICONDUCTOR JUNCTIONS