The epitaxial growth by MOVPE of (Hg,Mn)Te on (001) GaAs substrates
- 1. Univ. of Durham, School of Engineering and Applied Science, South Road, Durham, DH1 3LE (United Kingdom)
Description
This paper reports on epitaxial thin films of the dilute magnetic semiconductor Hg1-xMnxTe grown by MOVPE on {100} GaAs substrate with or without buffer layers. Deposition took place in a horizontal, atmospheric pressure reactor at temperatures in the range 350-400 degrees C, using tricarbonyl (methyl cyclopentadienyl) manganese, di-isopropyl tellurium and elemental mercury. Buffer layers consisted of thin layers of ZnTe and an upper thick layer (∼1 μm) of CdTe. The good crystallinity was confirmed by RHEED and double crystal x-ray diffraction with rocking curve widths of 500-600 arc. sec. for non-buffered layers, and 315 arc. sec. for buffered layers. TEM investigations show that layers grown on buffered substrates had improved microstructures defect content. Electrical transport measurements revealed that as-grown layers were p-type with Hall mobilities in excess of 0.1 m2V-1s-1
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (United States)
- ISBN
- 1-55899-108-5
- Imprint Title
- Long-wavelength semiconductor devices, materials, and processes
- Imprint Pagination
- 543 p.
- Journal Page Range
- p. 35-40.
Conference
- Title
- Fall meeting of the Materials Research Society (MRS).
- Dates
- 24 Nov - 1 Dec 1990.
- Place
- Boston, MA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23042518
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRON DIFFRACTION; ELECTRON MOBILITY; EPITAXY; FABRICATION; GALLIUM ARSENIDES; HALL EFFECT; MAGNETIC PROPERTIES; MANGANESE TELLURIDES; MERCURY TELLURIDES; MICROSTRUCTURE; ORGANOMETALLIC COMPOUNDS; P-TYPE CONDUCTORS; SEMICONDUCTOR MATERIALS; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIFFRACTION; FILMS; GALLIUM COMPOUNDS; MANGANESE COMPOUNDS; MATERIALS; MERCURY COMPOUNDS; MOBILITY; ORGANIC COMPOUNDS; PARTICLE MOBILITY; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-901105--.