Published July 1, 2016
| Version v1
Journal article
Formation of deep mesa-structures on SiC using fluoride plasma
- 1. St. Petersburg Electrotechnical University "LETI", Professora Popova str. 5, St. Petersburg, 197376 (Russian Federation)
Description
A process of deep profiles formation on silicon carbide using ion-plasma etching in fluoride plasma is discussed. An industrial equipment «Caroline PE 15» (Russia) with ICP plasma source was used in experiments. The obtained experimental samples are perspective in power electronics applications. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/729/1/012008Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 729
- Journal Issue
- 1
- Journal Page Range
- [3 p.]
- ISSN
- 1742-6596
Conference
- Title
- 23. international conference on vacuum technique and technology
- Dates
- 7-9 Jun 2016
- Place
- St Petersburg (Russian Federation)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48100528
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ETCHING; FLUORIDES; IONS; PLASMA; SILICON; SILICON CARBIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; ELEMENTS; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; SURFACE FINISHING