Published June 1989
| Version v1
Journal article
Specific features of divacancies annealing in silicon with disorder regions
- 1. AN SSSR, Novosibirsk (USSR). Inst. Fiziki Poluprovodnikov
Description
Comprehensive investigation of annealing character for divacancies in n-type silicon irradiated by neutrons is conducted. Comprehensive analysis of DLTS experiment data has shown, that annealing occurs in two stages. High-temperature stage (300-350 deg C, Ea=1.5 eV activation energy) is linked with divacancies annealing in crystal matrix. Low-temperature stage (100-200 deg C, Ea=1.0eV) is caused by approach of interstitial type defects to divacancies localized in PO nucleus
Additional details
Additional titles
- Original title (Russian)
- Особенности отжига дивакансий в кремнии, содержащем разупорядоченные области
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 23
- Journal Issue
- 6
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1076-1079
- ISSN
- 0015-3222
- CODEN
- FTPPA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 21082435
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACTIVATION ENERGY; ANNEALING; HIGH TEMPERATURE; INTERSTITIALS; MONOCRYSTALS; N-TYPE CONDUCTORS; NEUTRONS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SILICON; VACANCIES
- Descriptors DEC
- BARYONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTARY PARTICLES; ELEMENTS; ENERGY; FERMIONS; HADRONS; HEAT TREATMENTS; MATERIALS; NUCLEONS; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS