High spin-polarization in ultrathin Co₂MnSi/CoPd multilayers

Half-metallic Co₂MnSi finds a broad spectrum of applications in spintronic devices either in the form of thin films or as spacer in multilayers. Using state-of-the-art ab-initio electronic structure calculations we exploit the electronic and magnetic properties of ultrathin Co₂MnSi/CoPd multilayers. We show that these heterostructures combine high values of spin-polarization at the Co₂MnSi spacer with the perpendicular magnetic anisotropy of binary compounds such as CoPd. Thus they could find application in spintronic/magnetoelectronic devices. - Highlights: • Ab-initio study of ultrathin Co₂MnSi/CoPd multilayers. • Large values of spin-polarization at the Fermi are retained. • Route for novel spintronic/magnetoelectronic devices