Novel characterisation techniques for strained layer quantum well structures grown by metal organic vapour phase epitaxy

Low pressure metal organic vapour phase epitaxy growth and characterisation of strained InGaAs/GaAs quantum well structures within and beyond pseudomorphic limit are reported. A capacitance - voltage profiling technique is used to obtain conduction band offset ΔEc of a single quantum well GaAs/InGaAs/GaAs. X-ray diffraction from single quantum well is obtained which gives a measure of well thickness. Combination of photoluminescence and x-ray diffraction measurements are used to estimate strain relaxation beyond the pseudomorphic limit. (author). 8 refs., 4 figs