Published March 24, 2003
| Version v1
Journal article
Epitaxial growth of CoSi2 on hydrogen-terminated Si(001)
Creators
- 1. Kochi University of Technology, Tosa-Yamada, Kochi 782-8502 (Japan)
- 2. Institute of Space and Astronautical Science, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510 (Japan)
- 3. Silicon Systems Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198 (Japan)
- 4. Teikyo University of Science and Technology, 2525 Yatsusawa, Uenohara-machi, Kitatsauru-gun, Yamanashi 409-0193 (Japan)
Description
We demonstrate that CoSi2 grows epitaxially on H-terminated Si(001) and present the growth mechanism. It was found that direct reaction of Co with Si is suppressed on H-terminated Si below 400 deg. C. Thus, the hydrogen at the Co/Si interface hinders the formation of Co2Si and CoSi. Upon thermal desorption of hydrogen at around 400-550 deg. C, CoSi2, which is closely lattice-matched to Si(001), grows on Si(001) and thus, thin epitaxial CoSi2 films are formed on Si(001). The {111}-faceting was completely suppressed in the epitaxial CoSi2/Si(001), leading to the atomically flat interface
Additional details
Identifiers
- DOI
- 10.1063/1.1562335;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 82
- Journal Issue
- 12
- Journal Page Range
- p. 1842-1844
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35032388
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- COBALT SILICIDES; CRYSTAL STRUCTURE; EXPERIMENTAL DATA; HYDROGEN; INTERFACES; MOLECULAR BEAM EPITAXY; SILICON; THIN FILMS
- Descriptors DEC
- COBALT COMPOUNDS; CRYSTAL GROWTH METHODS; DATA; ELEMENTS; EPITAXY; FILMS; INFORMATION; NONMETALS; NUMERICAL DATA; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2003 American Institute of Physics.