Published November 7, 1988
| Version v1
Journal article
Breaking of the usual selection rule for magnetoluminescence in doped semiconductor quantum wells
Creators
- 1. Sandia National Laboratories, Albuquerque, New Mexico 87185
Description
We present experimental and theoretical evidence for impurity-assisted off-diagonal (i.e., Δn>0) transitions between conduction- and valence-band Landau levels (n = 0,1,. . . ) for magnetoluminescence in modulation-doped degenerate semiconductor quantum wells. This new selection rule is employed to determine simultaneously the optical effective masses of the electrons and in-plane light holes in n-type strained GaAs/InGaAs/AlGaAs quantum wells
Additional details
Publishing Information
- Journal Title
- Physical Review Letters
- Journal Volume
- 61
- Journal Issue
- 19
- Series
- Phys. Rev. Lett.
- Journal Page Range
- 2265-2268
- ISSN
- 0031-9007
- CODEN
- PRLTA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20015271
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ARSENIDES; DOPED MATERIALS; EFFECTIVE MASS; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; LINE WIDTHS; LUMINESCENCE; MAGNETO-OPTICAL EFFECTS; MODULATION; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; SELECTION RULES; STRAINS; SYMMETRY BREAKING; VERY LOW TEMPERATURE
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MASS; MATERIALS; PHOTON EMISSION; SEMICONDUCTOR MATERIALS