Parallel stress and perpendicular strain depth-distributions in /001/ silicon amorphized by ion implantation

The measurements performed by X-rays on implanted silicon show that both surface amorphous film and underlying interstitial defects are able to induce wafer convexity. The simulation of the rocking curves obtained by double crystal diffraction on the sample before and after annealing, the measurement of the curvature radius and the use of a theoretical model developed for multilayer structures allow us to determine the tangential stress profile of the implanted wafer and the average relaxed volume expansion of the amorphous layer. (author) 11 refs., 4 figs