Gate-tunable kinetic inductance parametric amplifier
Creators
- 1. QuTech, Delft University of Technology, 2628 CJ Delft, Netherlands
- 2. Kavli Institute for Nanoscience, Delft University of Technology, 2628 CJ Delft, Netherlands
- 3. Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
Description
Superconducting parametric amplifiers play a crucial role in the preparation and readout of quantum states at microwave frequencies, enabling high-fidelity measurements of superconducting qubits. Most existing implementations of these amplifiers rely on the nonlinearity from Josephson junctions, superconducting quantum interference devices, or disordered superconductors. Additionally, frequency tunability arises typically from either flux or current biasing. In contrast, semiconductor-based parametric amplifiers are tunable by local electric fields, which impose a smaller thermal load on the cryogenic setup than current and flux biasing and lead to vanishing crosstalk to other on-chip quantum systems. In this work, we present a gate-tunable parametric amplifier that operates without Josephson junctions, using a proximitized semiconducting nanowire. This design achieves near-quantum-limited performance, featuring more than 20-dB gain and a 30-MHz gain-bandwidth product. The absence of Josephson junctions results in advantages, including substantial saturation powers of dBm, magnetic field compatibility up to , and frequency tunability over a range of 15 MHz. Our realization of a parametric amplifier supplements efforts towards gate-controlled superconducting electronics, further advancing the abilities for high-performing quantum measurements of semiconductor-based and superconducting quantum devices.
Additional details
Identifiers
- DOI
- 10.1103/PhysRevApplied.21.014052;
- arXiv
- arXiv:2308.06989;
- Crossref Funder ID
- 10.13039/501100003246;
Publishing Information
- Journal Title
- Physical Review Applied
- Journal Volume
- 21
- Journal Issue
- 1
- Journal Page Range
- 13 pgs.
- ISSN
- 2331-7019
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COMPATIBILITY; ELECTRIC FIELDS; IMPLEMENTATION; INDUCTANCE; INTERFERENCE; JOSEPHSON JUNCTIONS; MAGNETIC FIELDS; MAGNETIC FLUX; MICROWAVE RADIATION; NONLINEAR PROBLEMS; PARAMETRIC AMPLIFIERS; QUANTUM STATES; QUBITS; READOUT SYSTEMS; SATURATION; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- AMPLIFIERS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELECTRONIC EQUIPMENT; EQUIPMENT; INFORMATION; MATERIALS; PHYSICAL PROPERTIES; QUANTUM INFORMATION; RADIATIONS; SUPERCONDUCTING JUNCTIONS; TUNNEL JUNCTIONS
Optional Information
- Copyright
- © 2024 American Physical Society
- Notes
- Contact Email: l.j.splitthoff@gmail.com; Record automatically processed
- Funding organization
- Dutch Research Council (NWO); Top Consortia for Knowledge and Innovation; Dutch Ministry of Economic Affairs; Microsoft Quantum initiative