Electric and photoelectric properties of InAsSbP solid solutions

Electric and photoelectric properties of epitaxial layers of InAs1-x-ySbyPx solid solutions are investigated; the solutions were produced by the method of liquid epitaxy in 0.03≤x≤0.26 composition range. Spectral characteristics of photoconductivity show that the width of the energy gap Eg varies from 0.41 to 0.52 eV at 77 K as 'x' growth from 0.03 to 0.26. Temperature dependence of Hall coefficient in undoped layers allowed to establish two donor levels with activation energies of ED1≅0.002 eV and ED2≅0.03 eV. It is shown that tellurium and tin doping enables to produce material in a wide range of concentrations from 1016 to 1019 cm-3. Concentrations of Te and Sn atoms in solid and liquid phases are measured and their segregation coefficients are determined: CTe=0.06-0.96, CSn≅0.01