Published 1998
| Version v1
Miscellaneous
Ultraviolet-sensitive, visible-blind GaN detectors grown by MOCVD
Creators
- 1. Institute of Experimental Physics, University of Warsaw, Warsaw (Poland)
- 2. Institute of Electronic Materials Technology, Warsaw (Poland)
- 3. Institute of Electron Technology, Warsaw (Poland)
Description
no abstract available
Additional details
Additional titles
- Augmented title (English)
- thin film
Publishing Information
- Imprint Title
- Abstracts of The Third European GaN Workshop EGW-3
- Imprint Pagination
- 97 p.
- Journal Page Range
- p. 70
Conference
- Title
- 3. European GaN Workshop EGW-3
- Dates
- 22-24 Jun 1998
- Place
- Warsaw (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31064580
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ALUMINIUM OXIDES; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDES; HETEROJUNCTIONS; MEETINGS; ORGANOMETALLIC COMPOUNDS; PHOTODETECTORS; PHOTODIODES; SUBSTRATES; THIN FILMS; ULTRAVIOLET RADIATION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; ELECTROMAGNETIC RADIATION; FILMS; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SURFACE COATING