Effect of hydrogen on high resistivity p-type CdTe

Annealing under hydrogen atmosphere has been investigated to define the optimal temperature and duration of this treatment on high resistivity THM grown p-type CdTe. A treatment around 100-150deg C for several hours improves the characteristics of nuclear radiation detectors. The effects of this treatment on polarization, which appear in halogen compensated material with aluminium contacts, has been evaluated. This annealing treatment has been compared to other techniques used to introduce hydrogen by ion implantation at low and high energy. The physical effects of hydrogen introduction have been investigated by current-voltage (I-V) and thermally stimulated current measurements (TSC), as well as by nuclear techniques giving mobility and lifetime products (μτ), rise time distribution and trapping effects. Thermal treatments of CdTe under different atmospheres such as air, argon and vacuum were compared with annealing under hydrogen, in order to understand the effect of molecular hydrogen on CdTe. (orig.)