Published February 4, 2021 | Version v1
Journal article Metadata-only

Refined analysis of C–V and I–V characteristics of Al/dielectric/Si structures containing nanosized Ta2O5/SiOxNy dielectric stack

Creators

  • 1. Research Center for Environment and Materials, Macedonian Academy of Sciences and Arts, Krste Misirkov 2, 1000 Skopje, North Macedonia (North Macedonia, Republic of)
  • 2. Institute of Physics, Faculty of Natural Sciences and Mathematics, Ss Cyril and Methodius University, Arhimedova 3 1000, Skopje, North Macedonia (North Macedonia, Republic of)

Description

In this work we carry out a refined analysis of the C–V and I–V characteristics of Al/Ta2O5/SiOxNy/Si structures at limited voltages (from −3.0 V to +1.0 V). The modified Terman method was used to determine the interface state densities over the silicon bandgap, and an extended comprehensive model was utilised to determine the I–V characteristics of metal/high-κ/SiO2/Si structures.

A sharp peak in interface states distribution is observed at around 0.1 eV above the valence band top; its presence is identified as the origin of the double-knee shaped C–V characteristics. The substantial contribution of the Schottky effect was observed in the leakage currents at low voltages. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6463/abbfc9

Additional details

Identifiers

DOI
10.1088/1361-6463/abbfc9;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
54
Journal Issue
5
Journal Page Range
[9 p.]
ISSN
0022-3727
CODEN
JPAPBE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53058113
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; LEAKAGE CURRENT; NANOSTRUCTURES; SCHOTTKY EFFECT; SILICON; SILICON OXIDES; STACKS; TANTALUM OXIDES
Descriptors DEC
CHALCOGENIDES; CURRENTS; ELECTRIC CURRENTS; ELEMENTS; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS