Finding of deep concentration profiles of As impurity atoms in silicon crystals using characteristic X radiation excited with H+ and He+ ions

For finding profiles two methods are used: variation of angle of incidence of ions on sample and energies of H+ and He+ incident ions with 0.3-1.5 MeV energies. Obtained are intensities of AsK-radiation in silicon depending on incidence angle and ion energy for the case of uniform As atom distribution over crystal volume, exponential coincidence with depth as well as thermodiffusive profiles and ion interstitial ones. As profiles in silicon have been found