Published October 31, 2011 | Version v1
Journal article

Shallow bath chemical deposition of CdS thin film

  • 1. Department of Molecule Science and Engineering, National Taipei University of Science and Technology, Taipei, 10617, Taiwan (China)
  • 2. Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan (China)
  • 3. Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi, 835 215 (India)
  • 4. Green Energy and Environmental Research Laboratory, Industrial Technology Research Institute, Hsin-Chu, Taiwan (China)

Description

Cadmium sulfide thin film was grown by shallow chemical bath deposition technique. This technique used a highly conducted hot plate to heat the substrate, while using a shallow bath for higher thermal gradients. As a result, large area uniformity could be achieved and the homogeneous nucleation was suppressed. More importantly, the solution used was greatly reduced, which is crucial for cost reduction in practice. The effects of temperature and shaking on the growth kinetics and film properties were investigated. The reaction activation energy was obtained to be 0.84 eV, and was not affected much by shaking indicating that the deposition is essentially reaction controlled. Furthermore, the films deposited at low or high temperature conditions had better photoconductivity.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2011.07.035

Additional details

Identifiers

DOI
10.1016/j.tsf.2011.07.035;
PII
S0040-6090(11)01422-2;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
520
Journal Issue
1
Journal Page Range
p. 217-223
ISSN
0040-6090
CODEN
THSFAP

INIS

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.