Self-biased silicon detectors with a built-in field for measuring heavy charged particles

Self-biased silicon detectors with a good carrier collection and a high speed response have been produced by using a wafer with high resistive epitaxial layer grown on a low resistive silicon substrate and also a wafer with the graded impurity distribution formed diffusion technique. The build-in field induced by a large difference of impurity concentration is expected to be effective for sweeping away the high density charge plasma to electrodes before recombination. Energy spectra of fission fragments from 252C/sub F/ are measured by using the detectors. The results show that the detector will be promising for measurement of heavy charged particles