Selection of substrate orientation and phosphorus flux to achieve p-type carbon doping of Ga0.5In0.5P by molecular beam epitaxy

We show that the p-type doping of Ga0.5In0.5P grown by solid-source molecular beam epitaxy using CBr4 as a carbon source is very strongly dependent upon the phosphorus flux and upon the substrate misorientation from (100). High densities of A-type steps and low phosphorus flux favor the incorporated carbon acting as a p-type dopant. We demonstrate that with the substrate orientation and phosphorus flux chosen to satisfy these two criteria, doping of C:Ga0.5In0.5P into the mid-1018holes/cm3 range can be achieved for the as-grown material. copyright 1997 American Institute of Physics