Published 2004
| Version v1
Miscellaneous
Ion beam shadowing effects in SIMS depth profile analysis of MBE-grown nanostructures
Creators
- 1. Faculty of Physics, Warsaw University of Technology, Warsaw (Poland)
- 2. Industrial Institute of Electronics, Warsaw (Poland)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004
- Imprint Pagination
- 257 p.
- Journal Page Range
- p. 198
Conference
- Title
- 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004
- Dates
- 14-17 Jun 2004
- Place
- Kazimierz Dolny (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 36060162
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ALUMINIUM COMPOUNDS; ARGON IONS; ARSENIDES; DEPTH; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; ION BEAMS; MASS SPECTROSCOPY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; SECONDARY BEAMS; SHADOW EFFECT; SPATIAL DISTRIBUTION; SPUTTERING; SUBSTRATES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHARGED PARTICLES; CRYSTAL GROWTH METHODS; DIMENSIONS; DISTRIBUTION; EPITAXY; GALLIUM COMPOUNDS; IONS; PNICTIDES; SPECTROSCOPY
Optional Information
- Notes
- 5 refs