Published 2008 | Version v1
Journal article Metadata-only

Dislocation related defect states in GaN irradiated with 1 MeV electron-beam

Creators

  • 1. Quantum-Function Spinics Lab., Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of)
  • 2. Seoul Center, Korea Basic Science Institute, Seoul 133-701 (Korea, Republic of)
  • 3. Nano Device Research Center, Korea Institute of Science and Technology, Seoul 130-701 (Korea, Republic of)

Description

Undoped GaN layers with thickness of 278 μm were grown by hydride vapor phase epitaxy method. The samples with different threading dislocation densities of 9.0 x 106 cm-2 and 7.2x106 cm-2 were irradiated by electron-beam with the energy of 1 MeV and dose of 1 x 1015 cm-2. The defect states of the samples after electron beam irradiation were characterized by deep level transient spectroscopy measurement. After the electron-beam irradiation, the the defects appeared to states with the activation energies of 0.61 eV, 0.30 eV, and 0.57 eV. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200778552

Additional details

Identifiers

DOI
10.1002/pssc.200778552;

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
5
Journal Issue
6
Journal Page Range
p. 1630-1632
ISSN
1610-1634

Conference

Title
7. international conference of nitride semiconductors (ICNS-7)
Dates
16-21 Sep 2007
Place
Las Vegas, NV (United States)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
39082960
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS; ELECTRON COLLISIONS; ENERGY LEVELS; GALLIUM NITRIDES; HYDRIDES; KEV RANGE 100-1000; LAYERS; PHYSICAL RADIATION EFFECTS; VAPOR PHASE EPITAXY
Descriptors DEC
COLLISIONS; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ENERGY; ENERGY RANGE; EPITAXY; GALLIUM COMPOUNDS; HYDROGEN COMPOUNDS; KEV RANGE; LINE DEFECTS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; RADIATION EFFECTS; SPECTROSCOPY

Optional Information

Notes
With 3 figs., 11 refs.. SICI: 1610-1634(200805)5:6<1630::AID-PSSC200778552>3.0.TX;2-1