Processing dependence of texture development in La2Zr2O7 buffer layer by sol-gel technique for YBCO coated conductors
- 1. National High Magnetic Field Laboratory, 1800 E. Paul Dirac Dr., Tallahassee, Florida 32310 (United States)
- 2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
Description
Perovskite textured La2Zr2O7 (LZO) films were deposited on Ni tapes using sol-gel process for fabrication of second generation high-Tc superconductors. LZO solutions were derived from acetate and alkoxide precursors. The effects of precursors, solvents, chelating agents, and annealing conditions (temperature and time), on epitaxial growth of LZO were investigated by XRD, SEM, EDS, and X-ray pole figure analysis. It was found that texture of LZO depended on, solution preparation, and annealing conditions. Textured, homogenous, dense, crack free and pinhole free, LZO films were produced on textured Ni tapes by postannealing at 1150 deg. C for 10 min under 4%H2-Ar gas flow when lanthanum (III) 2-methoxyethoxide precursor and 2-methoxyethanol solvent were used. When lanthanum acetate precursor and trifluoroacetic acid were used, texture was obtained at 1160 deg. C for 40 min annealing conditions
Additional details
Identifiers
- DOI
- 10.1063/1.1472579;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 614
- Journal Issue
- 1
- Journal Page Range
- p. 503-510
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- Cryogenic engineering and international cryogenic materials conference on advances in cryogenic engineering
- Acronym
- CEC/ICMC 2001
- Dates
- 16-20 Jul 2001
- Place
- Madison, WI (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35081833
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ACETATES; ANNEALING; ARGON; CHELATING AGENTS; EPITAXY; FABRICATION; HIGH-TC SUPERCONDUCTORS; HYDROGEN; LANTHANUM COMPOUNDS; PEROVSKITE; PRECURSOR; SCANNING ELECTRON MICROSCOPY; SOL-GEL PROCESS; SOLUTIONS; SOLVENTS; TEMPERATURE RANGE 1000-4000 K; TEXTURE; THIN FILMS; X-RAY DIFFRACTION; ZIRCONIUM OXIDES
- Descriptors DEC
- CARBOXYLIC ACID SALTS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; DISPERSIONS; ELECTRON MICROSCOPY; ELEMENTS; FILMS; FLUIDS; GASES; HEAT TREATMENTS; HOMOGENEOUS MIXTURES; MICROSCOPY; MINERALS; MIXTURES; NONMETALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PEROVSKITES; RARE EARTH COMPOUNDS; RARE GASES; SCATTERING; SUPERCONDUCTORS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; TYPE-II SUPERCONDUCTORS; ZIRCONIUM COMPOUNDS
Optional Information
- Notes
- (c) 2002 American Institute of Physics.