Possibility of using BeMgZnSe as a new cladding material for ZnSe-based blue laser diodes
- 1. Kyunghee Univ., Seoul (Korea, Republic of)
- 2. Kwangwoon Univ., Seoul (Korea, Republic of)
- 3. Tohoku Univ., Sendai (Japan)
Description
We calculated the gain and the radiative recombination current density of ZnSe/BexMgyZn1-x-ySe/BexMgyZn1-x-ySe separate confinement heterostructure (SCH) laser diodes and compared the results with those for the more popular ZnSe/Zn1-xMgxSySe1-y/Zn1-xMgxSySe1-y system. For five different values of the cladding-layer energy gap (Eg,c), we sought the optimum SCH structure that had a minimum threshold current density for both quaternaries, and we compared the corresponding current densities. For the same Eg,c, ZnMgSSe was found to have a smaller threshold current density. The threshold current density decreased rapidly with increasing. Eg,c in both materials. Therefore, if the available energy gap of the BeMgZnSe cladding is larger than that of ZnMGZnSSe, BeMgZnSe may be the better choice
Additional details
Publishing Information
- Journal Title
- Journal of the Korean physical society
- Journal Volume
- 35
- Journal Issue
- 4
- Series
- 28 refs, 5 figs, 1 tab
- Journal Page Range
- p. 334-338
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 34074862
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CLADDING; CURRENT DENSITY; ENERGY GAP; THRESHOLD CURRENT; TRANSITION ELEMENTS; WAVEGUIDES
- Descriptors DEC
- CURRENTS; DEPOSITION; ELECTRIC CURRENTS; ELEMENTS; METALS; SURFACE COATING