Published May 23, 2007
| Version v1
Journal article
Layer-by-layer growth of thin epitaxial Fe3Si films on GaAs (001)
- 1. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)
Description
Molecular beam epitaxy of Fe3Si films on GaAs (001) is studied in situ by grazing incidence X-ray diffraction. Fe3Si grows layer-by-layer. During deposition the growth front roughens as indicated by the damping of the X-ray oscillations and corresponding atomic force micrographs. The X-ray oscillations are modified during growth at substrate temperatures of 180 deg. C and below
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2006.12.119;
- PII
- S0040-6090(06)01525-2;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 515
- Journal Issue
- 14
- Journal Page Range
- p. 5611-5614
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 9. International conference on surface X-ray and neutron scattering
- Dates
- 16-20 Jul 2006
- Place
- Taipei, Taiwan (China)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39018816
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DEPOSITION; FERROMAGNETIC MATERIALS; FILMS; GALLIUM ARSENIDES; IRON SILICIDES; LAYERS; MOLECULAR BEAM EPITAXY; SURFACES; TOPOGRAPHY; X RADIATION; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTROMAGNETIC RADIATION; EPITAXY; GALLIUM COMPOUNDS; IONIZING RADIATIONS; IRON COMPOUNDS; MAGNETIC MATERIALS; MATERIALS; PNICTIDES; RADIATIONS; SCATTERING; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.