Annealing effect on screw dislocation velocity in indium antimonide

The influence of annealing on mobility of screw dislocations introduced by the method of four-point bending in indium antimonide monocrystals with tellurium addition has been investigated. The loading was performed at 423K, the annealing - at 523 K. It is shown that time dependence of average pass length of the dislocations has a linear character for non-annealed crystals and nonlinear character for the annealed ones. For 2 hours of annealing at 573 K the dislocations become practically immobile and the stress of start σst=10MPa appears. The appearance of starting stresses for the dislocation motion is explained by the formation of qualitatively new impurity atmosphere and its interaction with the dislocation