Published 1990 | Version v1
Report Open

Development and investigation of silicon microstrip detectors

Creators

  • 1. Rizhskij Nauchno-Issledovatel'skij Inst., Radioizotopnogo Priborostroeniya, Riga (USSR)
  • 2. Gosudarstvennyj Komitet po Ispol'zovaniyu Atomnoj Ehnergii SSSR, Serpukhov (USSR). Inst. Fiziki Vysokikh Ehnergij

Description

This paper describes the process of constructing a silicon microstrip detectors. The characteristics of the detectors are investigated. The leakage current of diode element in the case of total depletion is not higher than 10 nA. The signal-to-noise ratio is about 6 if the preamplifiers with time constant about 20 ns are used. 4 refs.; 7 figs

Availability note (English)

MF available from INIS under the Report Number.

Files

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Additional details

Additional titles

Original title (Russian)
Создание и исследование характеристик микрополосковых кремниевых детекторов

Publishing Information

Imprint Pagination
8 p.
Report number
IFVE-OEF--90-65

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
22061072
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
CARRIER LIFETIME; DIMENSIONS; EFFICIENCY; ELECTRIC CONDUCTIVITY; FABRICATION; FLOWSHEETS; LEAKAGE CURRENT; N-TYPE CONDUCTORS; PERFORMANCE TESTING; PREAMPLIFIERS; SI SEMICONDUCTOR DETECTORS; SIGNAL-TO-NOISE RATIO
Descriptors DEC
AMPLIFIERS; CURRENTS; DIAGRAMS; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELECTRONIC EQUIPMENT; EQUIPMENT; INFORMATION; LIFETIME; MATERIALS; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; TESTING

Optional Information

Notes
Submitted to the journal Prib. Tekh. Ehksp.