Statistical analysis of cluster production efficiency in MD simulations of cascades in copper
Creators
Description
A large number of displacement cascades has been simulated using molecular dynamics (MD) for primary knock-on atoms (PKAs) of energy in the range 2-20 keV at 100 and 600 K. The defect production efficiency, intracascade clustering efficiency and fractions of self-interstitial atoms (SIAs) and vacancies contained in the clusters produced in the cascades were determined. The fractions of both SIAs and vacancies contained in clusters increased with increasing PKA energy and approached a saturation level at 20 keV. At both temperatures the clustered fraction of SIAs was higher than the clustered fraction of vacancies. This difference is larger at 600 K than that at 100 K and increases with increasing PKA energy. These results are compared with the corresponding values derived from experimental results. The comparison suggests that the single cascade simulations yield considerably higher values of the clustered fractions of both SIAs and vacancies primarily because the impact of intercascade defect reaction kinetics cannot be taken into account in the MD simulations
Additional details
Identifiers
- PII
- S0022311502010012;
Publishing Information
- Journal Title
- Journal of Nuclear Materials
- Journal Volume
- 307-311
- Journal Issue
- 1-4
- Series
- Countr of input: International Atomic Energy Agency (IAEA)
- Journal Page Range
- p. 866-870
- ISSN
- 0022-3115
- CODEN
- JNUMAM
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 34015692
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMIC CLUSTERS; ATOMIC DISPLACEMENTS; COMPUTERIZED SIMULATION; COPPER; ENERGY DEPENDENCE; INTERSTITIALS; KEV RANGE 01-10; KEV RANGE 10-100; MOLECULAR DYNAMICS METHOD; NUCLEAR CASCADES; STATISTICAL MODELS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; VACANCIES
- Descriptors DEC
- CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; ENERGY-LEVEL TRANSITIONS; KEV RANGE; MATHEMATICAL MODELS; METALS; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; RADIATION EFFECTS; SIMULATION; TEMPERATURE RANGE; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.