Published 1976 | Version v1
Book

Electronic properties of amorphous semiconductors

Creators

  • 1. S.C.K./C.E.N., Mol, Belgium

Description

Some experimental results on the transport properties of amorphous semiconductors which, in the author's opinion, can be interpreted in the framework of Mott's model are reviewed. The temperature dependence of the electric conductivity, thermopower and Hall effect measured on vitreous CdGe/sub x/As2 and particularly on some chalcogenide glasses lends some support for the existence of narrow tails of localized states at the band extremities

Additional details

Publishing Information

Publisher
Plenum Publishing Corp.
Imprint Place
New York
Imprint Title
Linear and nonlinear electron transport in solids
Journal Page Range
p. 435-465.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
9375863
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
AMORPHOUS STATE; CADMIUM ARSENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; GERMANIUM ARSENIDES; GLASS; HALL EFFECT; SEMICONDUCTOR MATERIALS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; GERMANIUM COMPOUNDS; PHYSICAL PROPERTIES