Published March 13, 1973
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Study of defects induced by phosphorus diffusion in silicon. Correlations with some electrical parameters of devices
Description
Structural defects are created during the diffusion of phosphorus in silicon. These defects are correlated with the deteriorations of the generation - recombination and avalanche phenomena in the charge - space region of planar diodes. The main topics studied are: choice of electrical parameters and test devices; experimental means of characterisation of defects: X-ray topography, transmission electron microscopy and mainly chemical etching which has been particularly emphasized; generation of the defects as a function of technological conditions; electrical measurements and correlations. (author)
Abstract (French)
Une etude des correlations entre les defauts de structure induits par la diffusion du phosphore dans le silicium et les degradations des phenomenes de generation - recombinaison et d'avalanche dans la zone de charge d'espace des diodes planar est presentee. Les principaux points abordes sont: definition des parametres electriques et des vehicules de tests; diversification et qualification des moyens de caracterisation: revelation chimique (pour laquelle un effort tout particulier a ete fait), topographie par rayons X, microscopie electronique par transmission; etude des defauts apparaissant en diffusion phosphore en fonction des conditions technologiques; mesures electriques et correlations. (auteur)Files
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Additional details
Additional titles
- Original title (French)
- Etude des defauts de structure crees par la diffusion du phosphore dans le silicium. Correlations avec certains parametres electriques des dispositifs
Identifiers
Publishing Information
- Imprint Pagination
- 119 p.
- Report number
- CEA-R--4464
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 45023937
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- CRYSTAL DEFECTS; DIFFUSION; ETCHING; MEASURING INSTRUMENTS; MEASURING METHODS; METALLOGRAPHY; MICROSTRUCTURE; PHOSPHORUS; QUALITY ASSURANCE; QUALITY CONTROL; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SILICON; SOLID STATE PHYSICS; TOPOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; CONTROL; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; MATERIALS; MICROSCOPY; NONMETALS; PHYSICS; SCATTERING; SEMICONDUCTOR DEVICES; SEMIMETALS; SURFACE FINISHING
Optional Information
- Notes
- 148 refs.; Available from the INIS Liaison Officer for France, see the 'INIS contacts' section of the INIS website for current contact and E-mail addresses: http://www.iaea.org/inis/contacts/