Published November 1, 2008
| Version v1
Journal article
On the solution of a metrology problem in semiconductor manufacturing using shape analysis
Creators
- 1. Woods Hole Oceanographic Institution, Woods Hole, MA 02543 (United States)
Description
This paper presents an efficient numerical technique to reconstruct the profile of one-dimensional gratings from ellipsometry measurements, that is, the ratio of reflection coefficients between the two basic polarizations. The basic idea is to use gradient-based optimization methods to create a minimizing sequence of profiles by iteratively changing its geometric parameters. The gradients with respect to the parameters are computed efficiently using adjoints of the electromagnetic fields. One possible application of this technique is in semiconductor metrology.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/135/1/012040Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 135
- Journal Issue
- 1
- Journal Page Range
- [8 p.]
- ISSN
- 1742-6596
Conference
- Title
- Theory and practice
- Acronym
- 6. international conference on inverse problems in engineering
- Dates
- 15-19 Jun 2008
- Place
- Paris (France)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41043932
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTROMAGNETIC FIELDS; ELLIPSOMETRY; ITERATIVE METHODS; MATHEMATICAL SOLUTIONS; OPTIMIZATION; POLARIZATION; REFLECTION; SEMICONDUCTOR MATERIALS; SHAPE
- Descriptors DEC
- CALCULATION METHODS; MATERIALS; MEASURING METHODS