Determination of lattice parameters using Convergent Beam Electron Diffraction (CBED) method

The CBED method was used for determination of the lattice parameters of a silicon single crystal. A computer program written for this application allow to achieve a good accuracy of 0.00025 nm. The Hough transform was applied for detection of the HOLZ line positions on the experimental CBED patterns, with the sub-pixels precision. In experiment the high hkl indices CBED patterns were used, which allowed to omit the time consuming dynamical simulations of the CBED patterns. (author)