Published 2003
| Version v1
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Voltage-current and voltage-capacity characteristics of p-n SiC transition formed by low-temperature diffusion of boron
- 1. Physical-Technical Institute AS RU, NPO 'Physics-Sun', Tashkent (Uzbekistan)
- 2. Faculty of Engineering, Tel Aviv University, Tel Aviv (Israel)
Description
no abstract available
Files
39123400.pdf
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Additional details
Additional titles
- Original title (Russian)
- Вольтамперные и вольтемкостные характеристики п-н- SiC переходов полученных путем низкотемпературной диффузии бора
Publishing Information
- Publisher
- Fiziko-tekhnicheskij institut, NPO 'Fizika-Solntse'
- Imprint Place
- Tashkent (Uzbekistan)
- Imprint Title
- Proceedings of the conference 'Fundamental and applied problems of physics'
- Imprint Pagination
- 494 p.
- Journal Page Range
- p. 402-404
- Report number
- INIS-UZ--133
Conference
- Title
- Conference on Fundamental and applied problems of physics consecrated to 60th anniversary of the Academy of Sciences of Uzbekistan and Physical-Technical Institute
- Original Conference Title
- Konferentsiya 'Fundamental'nye i prikladnye voprosy fiziki' posvyashchennaya 60--letiyu Akademii Nauk Respubliki Uzbekistan i Fiziko-Tekhnicheskogo Instituta
- Dates
- 27-28 Nov 2003
- Place
- Tashkent (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 39123400
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- BORON; CARRIER MOBILITY; CHARGE CARRIERS; DOPED MATERIALS; LIQUID PHASE EPITAXY; MAGNETORESISTANCE; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHOTOCONDUCTIVITY; SILICON CARBIDES; SUBSTRATES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CRYSTAL GROWTH METHODS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; EPITAXY; MATERIALS; MOBILITY; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SEMIMETALS; SILICON COMPOUNDS
Optional Information
- Notes
- 2 refs., 3 figs.; This record replaces 39121200 Imprint:Trudy konferentsii 'Fundamental'nye i prikladnye voprosy fiziki'